Jeremy Rashid, Ph.D.

U.S. Patent Agent | European Patent Attorney

Boston, MA
D: 617.345.3365
Overview

Jeremy is a dual-qualified European patent attorney and U.S. patent agent in the Intellectual Property Group. Jeremy has experience in drafting and prosecuting U.S., European and international patent applications, advising clients on freedom to operate, and assessing patent infringement and invalidity. Jeremy also has experience with post-grant proceedings before the U.S. Patent and Trademark Office, the U.S. Patent Trial and Appeal Board, and the European Patent Office.

Jeremy has spent several years working on patents and applications in the fields of high-tech electronics, including satellite and defense technologies, computer-implemented inventions, business transactional systems and Fintech. He is also familiar with medical devices, having worked on a large portfolio of multi-jurisdictional cases dealing with endosurgical tools, ultrasonic cauterization equipment, suturing tools, medical imaging systems, analyte test meters, stent technology, wound dressings and irrigation systems.

Jeremy graduated from the University of Cambridge with a master’s and doctorate in electrical engineering, specializing in CVD industrial diamond for electronics. His studies included solid state physics, wide bandgap semiconductor materials, device processing and fabrication, mathematical modeling, automotive electronics and electronic device packaging.

Prior to joining the patent profession, Jeremy was a post-doctoral research associate at the Centre for Advanced Photonics and Electronics at the University of Cambridge, where he focused on the application of carbon and single crystal diamond to quantum layers and power electronic devices. Jeremy is a named inventor on several patents and has authored a number of research papers published in peer-reviewed scientific journals.

Experience

Experience

Power electronic package having two substrates with multiple semiconductor chips and interconnections (Patent Nos. US7999369, US7557434, US8432030, GB2485087, GB2444978, GB2444293, DE102006040838, DE102006040820, JP5374831).

Switching device (Patent Nos. EP1803161, US8053783, JP5060297).

Wide band gap semiconductor device including junction field effect transistor (Patent Nos. US8274086, JP5326405).

Gate wiring layout for silicon‐carbide‐based junction field effect transistor (Patent Nos. US7164154, US7821013, JP4179147).

Education & Admissions
Bar Admissions

European Patent Office

U.S. Patent and Trademark Office

Education

Certificate in Intellectual Property Law, University of London Queen Mary, England

Doctor of Philosophy (Electrical Engineering), University of Cambridge, England

Master of Philosophy (Electrical Engineering), University of Cambridge, England

Bachelor of Engineering (Honors), National University of Singapore

Honors & Awards

Honors & Awards

Suffolk University Trustee Scholarship (2021)

IEEE Graduate Studentship (2007)

St. Edmund’s College Cambridge Commonwealth PhD Scholarship (2004)

Engineering and Physical Sciences Research Council EPSRC Graduate Scholarship (2002)

Memberships

Memberships

European Patent Institute (EPI)

Chartered Institute of Patent Attorneys (CIPA)

Boston Patent Law Association (BPLA)

Articles & Publications

Articles & Publications

“Trench oxide protection for 10kV 4H‐SiC trench MOSFETs,” IEEE Power Electronics and Drive Systems, vol. 2, pp. 1354‐1358.

“Optically Triggered Schottky Barrier Diodes in Single Crystal Diamond,” Journal of Diamond and Rel. Mat., vol. 14, pp. 499‐503.

“Double channel normally‐off SiC JFET with ultra‐low on‐state resistance,” IEEE Power Semiconductor Devices, pp. 309‐312.

“SiC Junction‐Controlled Transistors,” Invited Paper, Journal of Microelectronics, vol. 83, pp. 176‐180.

“Novel Packaging Techniques for High Power Electronics in SiC,” Silicon Carbide and Rel. Mat., MRS vols. 556‐557, pp. 971‐974.

“High Temperature Direct Cooled Inverter Module for Hybrid Electric Vehicle Application,” MRS vols. 556‐557, pp. 709‐712.

“Diamond Schottky Diodes for Power Electronics,” Electronics World magazine, pp. 20‐24.

“High Temperature Characterization of 4H‐SiC Vertical JFETs with Buried Gate and Buried Field Rings,” IEEE ISPSD, pp. 115‐ 118.

“Single Crystal Diamond M‐i‐P Diodes for Power Electronics,” IET Circuits, Devices & Systems, vol. 1, pp. 380‐386.

“Compact Double‐Side Liquid‐Impingement‐Cooled Integrated Power Electronic Module,” IEEE ISPSD and ICs, pp. 53‐56.

“On‐State Behaviour of Diamond Schottky Diodes,” Journal of Diamond and Rel. Mat., vol. 17, pp. 736‐740.

“High performance cooling system for automotive inverters,” IEEE Power Electronics and Applications, pp. 1‐9.

“Switching Performance of Epitaxially Grown Normally‐off 4H‐ SiC JFETs,” MRS vols. 600‐603, pp. 1067‐1070.

“δ‐Doped Single Crystal Diamond Schottky m‐i‐p+ Diodes,” IEEE Power Semiconductor Devices and ICs, pp. 249‐252.

“Numerical parameterisation of CVD single crystal diamond,” IEEE Trans. Electron Devices, vol. 55, pp. 2744‐2756.

Resources

Resources

Jeremy Rashid, Ph.D.
Practices
  • Intellectual Property
  • Intellectual Property & IP Litigation
Education

Certificate in Intellectual Property Law, University of London Queen Mary, England

Doctor of Philosophy (Electrical Engineering), University of Cambridge, England

Master of Philosophy (Electrical Engineering), University of Cambridge, England

Bachelor of Engineering (Honors), National University of Singapore

Admissions

European Patent Office

U.S. Patent and Trademark Office

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